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Samsung Launches Highest-capacity Mobile DRAM to Accommodate Next-generation Smartphones

SEOUL, KOREA — MARCH 14, 2019 — Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

“With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage,” said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. “Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers.”

Thanks to the 12GB mobile DRAM, smartphone makers can maximize the potential of devices that feature more than five cameras and ever-increasing display sizes as well as artificial intelligence and 5G capabilities. For smartphone users, the 12GB DRAM enables more fluid multitasking and faster searches as they navigate through a myriad of apps on ultra-large high-resolution screens. Also, the 1.1-millimeter thickness allows for even sleeker smartphone designs.


Samsung 12GB LPDDR4X


The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery. In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.

Since introducing 1GB mobile DRAM in 2011, Samsung continues to drive capacity breakthroughs in the mobile DRAM market, moving from 6GB (in 2015) and 8GB (2016) to today’s first 12GB LPDDR4X. From its cutting-edge memory line in Pyeongtaek, Korea, Samsung plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Date Capacity Mobile DRAM
Feb. 2019 12GB 1y-nm 16Gb LPDDR4X, 4266Mb/s
July 2018 8GB 1y-nm 16Gb LPDDR4X, 4266Mb/s
April 2018 8GB (development) 1x-nm 8Gb LPDDR5, 6400Mb/s
Sept. 2016 8GB 1x-nm 16Gb LPDDR4X, 4266Mb/s
Aug. 2015 6GB 20nm (2z) 12Gb LPDDR4, 4266Mb/s
Dec. 2014 4GB 20nm (2z) 8Gb LPDDR4, 3200Mb/s
Sept. 2014 3GB 20nm (2z) 6Gb LPDDR3, 2133Mb/s
Nov. 2013 3GB 2y-nm 6Gb LPDDR3, 2133Mb/s
July 2013 3GB 2y-nm 4Gb LPDDR3, 2133Mb/s
April 2013 2GB 2y-nm 4Gb LPDDR3, 2133Mb/s
Aug. 2012 2GB 30nm-class 4Gb LPDDR3, 1600Mb/s
2011 1/2GB 30nm-class 4Gb LPDDR2, 1066Mb/s
2010 512MB 40nm-class 2Gb MDDR, 400Mb/s
2009 256MB 50nm-class 1Gb MDDR, 400Mb/s
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I am the owner of Cerebral-overload.com and the Verizon Wireless Reviewer for Techburgh.com. Ben’s love of gadgets came from his lack of a Nintendo Game Boy when he was a child . Ben vowed from that day on to get his hands on as many tech products as possible. Ben’s approach to a review is to make it informative for the technofile while still making it understandable to everyone. Ben is a new voice in the tech industry and is looking to make a mark wherever he goes. When not reviewing products, Ben is also a 911 Telecommunicator just outside of Pittsburgh PA. Twitter: @gizmoboaks Hangouts: Beavercountyemt Skype: Ben.Oaks

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